ESPRIT '88: Putting the Technology to Use : Proceedings of the 5th Annual ESPRIT Conference, Brussels, November 14-17, 1988, Part 1North-Holland, 1988 - 1759 pages Part1. Advanced microelectronics. VLSI technologies - comparisons and prospects. Software technology. Advanced information processing. Part2. Office systems.Computer integrated manufacturing. Information exchange system. |
From inside the book
Results 1-3 of 96
Page 31
EFFECTS OF RECRYSTALLISATION ON UNDERLYING DEVICES Due to the
high thermal stress expected to occur in the SOI structure upon recrystallisation,
and during subsequent processing, it was necessary to investigate the effect of
this ...
EFFECTS OF RECRYSTALLISATION ON UNDERLYING DEVICES Due to the
high thermal stress expected to occur in the SOI structure upon recrystallisation,
and during subsequent processing, it was necessary to investigate the effect of
this ...
Page 71
Materials Integrable Simple Integration base devices integration optimisation Pin
CNET(a)/STL Low cost CNET(a)/STL receiver Pin/FET FET High speed MOCVD/
MBE CNET(a)/STL receiver InP, Ingaas and InAlAs Laser CNET(b) High sens.
Materials Integrable Simple Integration base devices integration optimisation Pin
CNET(a)/STL Low cost CNET(a)/STL receiver Pin/FET FET High speed MOCVD/
MBE CNET(a)/STL receiver InP, Ingaas and InAlAs Laser CNET(b) High sens.
Page 335
Woltages up to 1000 V and currents up to to 30 A can be handled by commercial
available devices. The real breakthrough however has been the integration on
the same chip of the control logic for the power device, making use of the CMOS
...
Woltages up to 1000 V and currents up to to 30 A can be handled by commercial
available devices. The real breakthrough however has been the integration on
the same chip of the control logic for the power device, making use of the CMOS
...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Technology Transfer from Research to Development Project 97 Pype P Van Meerbergen J De Man | 5 |
Materials and Devices Toward ThreeDimensional Integration Project 245 Cahill C G Dunne B OFlanagan S Hobbs L Mathewson A | 21 |
Physical ºquivalentCircuit Models for GaAs Mesſets Project 255 Ghione G Naldi C Pettenpaul E Ponse F | 52 |
Copyright | |
50 other sections not shown
Other editions - View all
Common terms and phrases
abstract abstract machine algorithm allows analysis Aphrodite application approach architecture Artificial Intelligence basic behaviour BFNEW BICMOS cell chip circuit CMOS complex components Computer concepts constraints DAIDA database defined definition described devices distributed domain dynamic environment error Esprit Project etch evaluation example execution expert systems Figure function GaAs gate global goal graphical GRASPIN IEEE implementation information system input integrated interaction interpreter knowledge base knowledge representation language layer LFSR logic programming machine mapping MESFET metaclass method methodology migration module node object-oriented objects operations output parallel parameters partial evaluation PCTE performance phase PIMS possible predicates problem procedure processor programming language project management Prolog Prolog III prototype query representation requirements rules semantic signal simulation specification structure subcircuit task techniques transistor transputer UNIX user interface VLSI wafer